Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)
Author:
Affiliation:
1. Institute of Microelectronics and Photonics, Łukasiewicz Research Network, Al. Lotników 32/46, 02-668 Warsaw, Poland
2. Faculty of Chemistry, Warsaw University of Technology, ul. Noakowskiego 3, 00-664 Warsaw, Poland
Funder
Narodowe Centrum Nauki
Horizon 2020 Framework Programme
Narodowe Centrum Badan i Rozwoju
IDUB project
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01627
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3. Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation
4. Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures
5. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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