Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties-Reference-Cited by-同舟云学术

Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

Published:2010-04-23 Issue:5 Volume:4 Page:2667-2672
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Robinson Joshua A.¹²,LaBella Michael¹,Trumbull Kathleen A.¹,Weng Xiaojun³,Cavelero Randall¹,Daniels Tad³,Hughes Zachary¹,Hollander Mathew¹²,Fanton Mark¹,Snyder David¹⁴

Affiliation:

1. The Electro-Optics Center

2. Department of Materials Science and Engineering

3. Materials Research Institute

4. Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1003138

Reference30 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant gate oxides for metal oxide Si transistors

3. Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering

4. Ionic Screening of Charged-Impurity Scattering in Graphene

5. Dielectric Screening Enhanced Performance in Graphene FET

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