Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene-Reference-Cited by-同舟云学术

Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene

Published:2011-08-04 Issue:9 Volume:11 Page:3601-3607
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hollander Matthew J.¹,LaBella Michael¹,Hughes Zachary R.¹,Zhu Michael¹,Trumbull Kathleen A.¹,Cavalero Randal¹,Snyder David W.¹,Wang Xiaojun¹,Hwang Euichul¹,Datta Suman¹,Robinson Joshua A.¹

Affiliation:

1. Materials Science and Engineering Department, ‡Electro-Optics Center, §Electrical Engineering Department, and ∥Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl201358y

Reference37 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Electron transport and full-band electron-phonon interactions in graphene

4. Breakdown current density of graphene nanoribbons

5. Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

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