Research on band-edge emission properties and mechanism of high-quality single-crystal diamond-Reference-Cited by-同舟云学术

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Research on band-edge emission properties and mechanism of high-quality single-crystal diamond

Published:2018-06 Issue: Volume:132 Page:651-655
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Zhang Ye,Chen Ya-nan,Liu Ya-li,Fu Fang-bin,Yu Wan-cheng,Jin Peng,Wang Zhan-guo

Funder

National Key Research and Development Program of China

Beijing Science and Technology Planning Project

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference34 articles.

1. High Carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

2. Reduction of dislocations in single crystal diamond by lateral growth over a macroscopic hole;Tallaire;Adv. Mater.,2017

3. High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition;Teraji;J. Appl. Phys.,2015

4. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond;Poklonski;J. Appl. Phys.,2016

5. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond;Kim;J. Mater. Chem. C,2017

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents;Journal of Crystal Growth;2024-01

2. Terahertz optoelectronic properties of synthetic single crystal diamond;Diamond and Related Materials;2023-11

3. Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area;Journal of Physics D: Applied Physics;2022-08-04

4. Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy;Journal of Luminescence;2020-10

5. The effect of oxygen on the epitaxial growth of diamond;Journal of Semiconductors;2018-12

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