The effect of oxygen on the epitaxial growth of diamond-Reference-Cited by-同舟云学术

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The effect of oxygen on the epitaxial growth of diamond

Published:2018-12 Issue:12 Volume:39 Page:123004
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Gong Meng,Chen Yanan,Yu Wancheng,Jin Peng,Wang Zhanguo,Wang Zhimin,Zhang Shenjin,Yang Feng,Zhang Fengfeng,Peng Qinjun,Xu Zuyan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/39/i=12/a=123004/pdf

Reference26 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Device properties of homoepitaxially grown diamond

3. Unique temperature dependence of deep ultraviolet emission intensity for diamond light emitting diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of nitrogen and oxygen on the high nucleation density diamond growth;International Journal of Refractory Metals and Hard Materials;2024-08

2. Recent progress in homoepitaxial single-crystal diamond growth via MPCVD;Journal of Materials Science: Materials in Electronics;2024-03

3. Effects of deposition time on growth of Ir buffer layer on MgO(1 0 0) support layer by magnetron sputtering;Results in Physics;2021-11

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