Effects of strain on the optical and thermodynamic properties of β-Ga2O3
Author:
Funder
Defense Advanced Research Projects Agency
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
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2. Calculation of electron impact ionization co-efficient in β-Ga2O3;Ghosh,2014
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4. Numerical modelling of the czochralski growth of -ga2o3;Miller;Crystals,2017
5. Composition determination of -(al x ga 1 x ) 2 o 3 layers coherently grown on (010) -ga 2 o 3 substrates by high-resolution x-ray diffraction;Oshima;Appl. Phys. Express,2016
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1. First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of β-Ga2O3;Modern Physics Letters B;2024-02-09
2. First-principles prediction on Ag3SbS4 as a photovoltaic absorber;Journal of Physics and Chemistry of Solids;2023-12
3. Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3;APL Materials;2023-06-01
4. Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures;Science China Materials;2022-09-30
5. First-principles study of the influence of Nb doping on the electronic structure and optoelectronic properties of β-Ga2O3;Physics Letters A;2022-05
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