Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=6/a=061102/pdf
Reference19 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Some electrical properties of the semiconductor βGa2O3
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4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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