Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials
2. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
5. Studies on room temperature characteristics and mechanism of visible luminescence of Ge-SiO2thin films
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1. Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing;Solid State Communications;2016-12
2. Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing;Thin Solid Films;2012-07
3. Stress Tuning of Ge Nanocrystals Embedded in Dielectrics;The Journal of Physical Chemistry C;2008-05-29
4. Raman resonance in the strained Ge quantum dot array;Nanotechnology;2008-05-27
5. Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2;Thin Solid Films;2008-04
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