Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices-Reference-Cited by-同舟云学术

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Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

Published:2014-07 Issue: Volume:190 Page:49-52
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Sugiyama H.,Ishikawa M.,Inokuchi T.,Tanamoto T.,Saito Y.,Tezuka N.

Funder

Grant-in-Aid for Scientific Research from JSPS

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference32 articles.

1. Spin MOSFETs as a basis for spintronics

2. Spin injection, transport, and read/write operation in spin-based MOSFET

3. Spin-Based MOSFET and Its Applications

4. Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor

5. Electronic measurement and control of spin transport in silicon

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the thermal tolerance of silicon-based lateral spin valves;Scientific Reports;2021-05-19

2. The interface characteristics of TiN(100)/MgO(100) multilayer on oxidized Si(100) substrate via first-principle calculations and experimental investigation;Molecular Simulation;2020-08-25

3. Large spin signals in n+-Si/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices;Journal of Applied Physics;2020-02-24

4. Observation of Magnetoresistance Effect in $n$ -Type Non-Degenerate Germanium With Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes;IEEE Transactions on Magnetics;2017-11

5. Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer;AIP Advances;2017-05

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