The interface characteristics of TiN(100)/MgO(100) multilayer on oxidized Si(100) substrate via first-principle calculations and experimental investigation
Author:
Affiliation:
1. Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin, People’s Republic of China
2. Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Ministry of Education, Harbin, People’s Republic of China
Funder
National Natural Science Foundation of China
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modelling and Simulation,Information Systems,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/08927022.2020.1808216
Reference32 articles.
1. Controlled Epitaxial Growth of Body-Centered Cubic and Face-Centered Cubic Cu on MgO for Integration on Si
2. Synthesis of MgO thin films grown by SILAR technique
3. Pulsed laser deposition of epitaxial MgO buffer layer for proton-conducting ceramic electrolytes
4. Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices
5. Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness
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