Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer-Reference-Cited by-同舟云学术

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Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer

Published:2017-05 Issue:5 Volume:7 Page:055937
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Saito Y.¹,Inokuchi T.¹,Ishikawa M.¹,Ajay T.¹,Sugiyama H.¹

Affiliation:

1. Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

Funder

Cabinet Office, Government of Japan

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978583

Reference19 articles.

1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

2. Spin-Based MOSFET and Its Applications

3. Electrical creation of spin polarization in silicon at room temperature

4. Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

5. Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices;Journal of Physics D: Applied Physics;2018-12-20

2. Local Magnetoresistance at Room Temperature in Si $\langle100\rangle$ Devices;IEEE Transactions on Magnetics;2018-11

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