Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4728117
Reference29 articles.
1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
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3. Spin-Based MOSFET and Its Applications
4. Spin-based logic in semiconductors for reconfigurable large-scale circuits
5. Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor
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