Origin of the Giant Spin-Detection Efficiency in Tunnel-Barrier-Based Electrical Spin Detectors
Author:
Funder
Wallonia-Brussels Federation
Aeronautical Research Council
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.024020/fulltext
Reference47 articles.
1. Giant Spin Accumulation in Silicon Nonlocal Spin-Transport Devices
2. Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
3. Spin relaxation through lateral spin transport in heavily doped n -type silicon
4. Large spin accumulation voltages in epitaxialMn5Ge3contacts on Ge without an oxide tunnel barrier
5. Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
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