Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3537923
Reference11 articles.
1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
2. Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
3. Cellular Logic-in-Memory Arrays
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