Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)-Reference-Cited by-同舟云学术

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)

Published:2013-05-07 Issue:17 Volume:113 Page:17C501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hamaya K.,Ando Y.,Masaki K.,Maeda Y.,Fujita Y.,Yamada S.,Sawano K.,Miyao M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4793501

Reference52 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Spintronics: Fundamentals and applications

3. Creation and Control of Spin Current in Solids

4. Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

5. Silicon spintronics

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