Passivation of p-type dopants in 4H-SiC by hydrogen
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. O. Madelung (Ed.), Data in Science and Technology: Semiconductors (Group IV. Elements and III–V Compounds), Springer, Heidelberg, 1991, p. 56.
2. SiC Dopant Incorporation Control Using Site-Competition CVD
3. Boron-related deep centers in 6H-SiC
4. Photoluminescence and transport studies of boron in 4H SiC
5. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
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1. Assessing the effect of H on the electronic properties of 4H-SiC;Chinese Physics B;2021-12-11
2. Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC;Journal of Physics: Condensed Matter;2018-04-16
3. Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions;The Journal of Chemical Physics;2017-07-14
4. Point Defects in Silicon Carbide;Semiconductors and Semimetals;2015
5. Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor;Journal of Applied Physics;2013-05-14
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