Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803881
Reference33 articles.
1. A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications
2. Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives
3. Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes
4. 6H-SiC photoconductive switches triggered at below bandgap wavelengths
5. 6H-SiC JFETs for 450 $^{\circ}\hbox{C}$ Differential Sensing Applications
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage;Journal of Vacuum Science & Technology A;2023-06-29
2. Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype;Crystal Growth & Design;2020-01-07
3. Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers;Materials;2016-08-31
4. Advanced Solar Energy Conversion Technologies Enabled by Novel (Nano)Materials and Processing for Space Power with Potential for Terrestrial Applications;12th International Energy Conversion Engineering Conference;2014-07-25
5. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model;Journal of Physics D: Applied Physics;2014-06-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3