Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions-Reference-Cited by-同舟云学术

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Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions

Published:2017-07-14 Issue:2 Volume:147 Page:024707
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Wang Tingting¹,Liu Guiwu¹,Li Yuanyuan¹,Hou Haigang¹,Xu Ziwei¹,Wang Mingsong¹,Qiao Guanjun¹

Affiliation:

1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China

Funder

Innovation/Entrepreneurship Program of Jiangsu Province

Qian Lan Project

Six Talent Peaks Project of Jiangsu Province

National Natural Science Foundation of China (NSFC)

China Postdoctoral Science Foundation

Jiangsu University (Advanced Talents Foundation of Jiangsu University)

Natural Science Foundation of Jiangsu Province (Jiangsu Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991847

Reference75 articles.

1. Diamond and silicon converge

2. On the Design Process of a 6-kVA Quasi-Z-inverter Employing SiC Power Devices

3. Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview

4. Fundamentals of Silicon Carbide Technology

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1. Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres;Materials;2023-06-14

2. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03

3. Simulation and experimental studies of the dissolution corrosion of 4H-SiC in liquid Pb/Bi;Applied Surface Science;2022-05

4. The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface;Applied Surface Science;2022-04

5. The damage investigations of 4H–SiC after P-ion irradiation;Applied Physics A;2020-06-16

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