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Photoluminescence properties of Er doped GaN

  • Published:2001-12 Issue: Volume:308-310 Page:34-37
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Przybylińska H.,Kozanecki A.,Glukhanyuk V.,Jantsch W.,As D.J.,Lischka K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant excitation of infrared emission in GaN:(Mn,Mg);Physical Review B;2018-06-28

2. Efficient temperature sensing using photoluminescence of Er/Yb implanted GaN thin films;Sensors and Actuators B: Chemical;2017-09

3. All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared;Scientific Reports;2017-02-15

4. First-principles identification of defect levels in Er-doped GaN;physica status solidi (RRL) - Rapid Research Letters;2016-10-21

5. Hybrid density functional study of optically active Er3+ centers in GaN;physica status solidi (RRL) - Rapid Research Letters;2015-11-12
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