All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared-Reference-Cited by-同舟云学术

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All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared

Published:2017-02-15 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Capuzzo Giulia,Kysylychyn Dmytro,Adhikari Rajdeep,Li Tian,Faina Bogdan,Tarazaga Martín-Luengo Aitana,Bonanni Alberta

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep42697.pdf

Reference56 articles.

1. Nakamura, S., Senoh, M. & Mukai, T. High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390–2392 (1993).

2. Nakamura, S. InGaN/AlGaN blue-light-emitting diodes. J. Vac. Sci. Technol. A 13, 705–710 (1995).

3. Yoshida, H., Yamashita, Y., Kuwabara, M. & Kan, H. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode. Nature Photon. 2, 551–554 (2008).

4. Gutt, R. et al. AlGaN-Based 355 nm UV light-emitting diodes with high power efficiency. Appl. Phys. Express 5, 032101 (2012).

5. Mishra, U. K., Parikh, P. & Wu, Y.-F. F. AlGaN/GaN HEMTs - An overview of device operation and applications. Proc. IEEE 90, 1022–1031 (2002).

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