Hydrogen enhanced thermal donor formation in p-type Czochralski silicon: application to low temperature active defect-engineering
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Enhanced thermal donor formation in silicon exposed to a hydrogen plasma
2. Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasma
3. Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C
4. Hydrogen‐accelerated thermal donor formation in Czochralski silicon
5. Hydrogen introduction and hydrogen‐enhanced thermal donor formation in silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon;Journal of Applied Physics;2021-09-21
2. Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices;Journal of Applied Physics;2021-01-14
3. What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?;Journal of The Electrochemical Society;2009
4. Annihilation of thermal donors in silicon annealed under high hydrostatic pressure;SPIE Proceedings;2003-10-21
5. The microstructure and electrical properties of hydrogenated Czochralski silicon treated at high temperature–pressure;Journal of Physics: Condensed Matter;2003-10-17
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