Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices-Reference-Cited by-同舟云学术

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Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices

Published:2021-01-14 Issue:2 Volume:129 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kiyoi Akira¹²^ORCID,Kawabata Naoyuki¹,Nakamura Katsumi³^ORCID,Fujiwara Yasufumi²

Affiliation:

1. Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

3. Power Device Works, Mitsubishi Electric Corporation, 1-1-1 Imajuku-Higashi, Nishi-ku, Fukuoka, Fukuoka 819-0192, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035260

Reference41 articles.

1. Selection of silicon wafer for power devices and the influence of crystal defects including impurities

2. Carbon enhancement effect on oxygen precipitation in Czochralski silicon

3. N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature Over 448 K

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Numerical Simulation Study of Oxygen Transport in Proton Exchange Membrane Fuel Cells at Intermediate Temperatures (80 °C–120 °C);Membranes;2024-03-22

2. Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals;Crystals;2022-12-22

3. Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals;Journal of Crystal Growth;2022-04

4. Annealing-temperature-dependent evolution of hydrogen-related donor and its strong correlation with X-photoluminescence center in proton-irradiated silicon;Journal of Applied Physics;2022-03-28

5. Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon;Journal of Applied Physics;2021-09-21

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