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Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals

  • Published:2022-04 Issue: Volume:584 Page:126582
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Sturm F.,Trempa M.,Schuster G.,Götz P.,Wagner R.,Barroso G.,Meisner P.,Reimann C.,Friedrich J.

Funder

Bavarian Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Oxygen precipitation properties of nitrogen-doped Czochralski silicon single crystals with low oxygen concentration;Kajiwara;Phys. Status Solidi A,2019

2. Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs;Schulze,2016

3. Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n -type silicon for power devices;Kiyoi;J. Appl. Phys.,2021

4. Review and comments for the development of point defect-controlled CZ-Si crystals and their application to future power devices;Hourai;Phys. Status Solidi A,2019

5. Fabrication of medium power insulated gate bipolar transistors using 300 mm magnetic Czochralski silicon wafers;Schulze;Phys. Stat. Sol. (A),2019
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