Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN-Reference-Cited by-同舟云学术

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Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN

Published:1999-12 Issue: Volume:273-274 Page:58-62
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Glaser E.R,Kennedy T.A,Freitas J.A,Shanabrook B.V,Wickenden A.E,Koleske D.D,Henry R.L,Obloh H

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Characterization of OMVPE-Grown AlGaInN Heterostructures

2. Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

3. Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

4. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

5. Atomic model for blue luminescences in Mg-doped GaN

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1. Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN;Physical Review B;2018-05-17

2. Different annealing temperature suitable for different Mg doped P-GaN;Superlattices and Microstructures;2017-04

3. Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method;physica status solidi (c);2015-03-18

4. Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method;physica status solidi (b);2015-01-29

5. Magnetic resonance and the structure of magnesium acceptors in gallium nitride;Physical Review B;2013-06-24

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