Author:
Bour D. P.,Chung H. F.,Götz W.,Romano L.,Krusor B. S.,Hofstetter D.,Rudaz S.,Kuo C. P.,Ponce F. A.,Johnson N. M.,Craford M. G.,Bringans R. D.
Abstract
ABSTRACTWe report on the OMVPE growth and characterization of AlGalnN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo- luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.
Publisher
Springer Science and Business Media LLC
Cited by
28 articles.
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