Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance-Reference-Cited by-同舟云学术

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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

Published:1997-02 Issue:2 Volume:41 Page:189-193
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kunzer M.,Baur J.,Kaufmann U.,Schneider J.,Amano H.,Akasaki I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

4. Photoluminescence of ion‐implanted GaN

5. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

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1. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10

2. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN;Japanese Journal of Applied Physics;2013-08-01

3. Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors;Physical Review Letters;2012-04-13

4. Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors;Physical Review B;2010-02-10

5. Luminescence properties of defects in GaN;Journal of Applied Physics;2005-03-15

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