Ordered nanopore boring in silicon: Metal-assisted etching using a self-aligned block copolymer Au nanoparticle template and gravity accelerated etching-Reference-Cited by-同舟云学术

Ordered nanopore boring in silicon: Metal-assisted etching using a self-aligned block copolymer Au nanoparticle template and gravity accelerated etching

Published:2010-04 Issue:4 Volume:12 Page:565-569
ISSN:1388-2481
Container-title:Electrochemistry Communications
language:en
Short-container-title:Electrochemistry Communications

Author:

Bauer Sebastian,Brunner Johannes G.,Jha Himendra,Yasukawa Yukiko,Asoh Hidetaka,Ono Sachiko,Böhm Heike,Spatz Joachim P.,Schmuki Patrik

Publisher

Elsevier BV

Subject

Electrochemistry

Reference21 articles.

1. Metal-assisted chemical etching in HF/H2O2 produces porous silicon

2. Uniform, Axial‐Orientation Alignment of One‐Dimensional Single‐Crystal Silicon Nanostructure Arrays

3. Boring Deep Cylindrical Nanoholes in Silicon Using Silver Nanoparticles as a Catalyst

4. Synthesis of Large-Area Silicon Nanowire Arrays via Self-Assembling Nanoelectrochemistry

5. Porous silicon formation: A quantum wire effect

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3. Direct Visualization of Etching Trajectories in Metal-Assisted Chemical Etching of Si by the Chemical Oxidation of Porous Sidewalls;Langmuir;2015-09-16

4. Metal assisted anodic etching of silicon;Nanoscale;2015

5. Porous Silicon Formation by Metal Nanoparticle-Assisted Etching;Handbook of Porous Silicon;2014