Über das verhalten von kohlenstoff beim zonenziehen von silicium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. TriPyramid Growth of Epitaxial Silicon
2. Tripyramids and associated defects in epitaxial silicon layers
3. The Influence of Carbon on Precipitation of Copper in Silicon Single Crystals
4. Concerning the carbon content in semiconductor silicon
5. Zum Einbau von Kohlenstoff bei der Herstellung von Reinstsilicium
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2. Atomistic simulations of carbon diffusion and segregation in liquid silicon;Journal of Applied Physics;2017-12-14
3. Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon;MATERIALS TRANSACTIONS;2002
4. Pulsed laser induced epitaxial crystallization of carbon–silicon alloys;Journal of Applied Physics;1996
5. Imaging and analysis of carbon distribution in GaAs using radioactive tracer 14C;Journal of Crystal Growth;1987-11
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