Atomistic simulations of carbon diffusion and segregation in liquid silicon
Author:
Affiliation:
1. School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
2. Department of Chemical and Biomolecular Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
Funder
National Natural Science Foundation of China
China Scholarship Council
Kuwait University
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5006944
Reference53 articles.
1. SiC and Si3N4 inclusions in multicrystalline silicon ingots
2. Electronic activity of SiC precipitates in multicrystalline solar silicon
3. Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method
4. A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cells
5. Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon
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