SiC and Si3N4 inclusions in multicrystalline silicon ingots-Reference-Cited by-同舟云学术

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SiC and Si3N4 inclusions in multicrystalline silicon ingots

Published:2004-02 Issue:1-2 Volume:7 Page:39-43
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Søiland A.K,Øvrelid E.J,Engh T.A,Lohne O,Tuset J.K,Gjerstad Ø

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Vibrational absorption of carbon and carbon-oxygen complexes in silicon

2. The solubility of carbon in pulled silicon crystals

3. Effect of carbon on oxygen precipitation in silicon

4. Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals

5. Electrical effects of SiC inclusions in EFG silicon ribbon solar cells

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4. Influences of hard inclusions on processing stress in diamond multi-wire sawing multi-crystalline silicon;Materials Science in Semiconductor Processing;2022-06

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