Concerning the carbon content in semiconductor silicon-Reference-Cited by-同舟云学术

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Concerning the carbon content in semiconductor silicon

Published:1965-09 Issue:9 Volume:8 Page:767-769
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Schink N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Silicon Carbide a High Temperature Semiconductor;Scace,1960

2. P.E. Price (private communication)

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural evolution of HMX during processing operations;Journal of Energetic Materials;2023-10-11

2. Halbleiter;Reine und angewandte Metallkunde in Einzeldarstellungen;1976

3. The Lattice Misfit and Its Compensation in the Si‐Epitaxial Layer by Doping with Germanium and Carbon;Journal of The Electrochemical Society;1975-04-01

4. Kohlenstoffbestimmung in Silicium ? Ein Beispiel f�r die Problematik analytischer Untersuchungen im ppm-Bereich;Fresenius' Zeitschrift f�r Analytische Chemie;1972

5. Comparison of Infrared and Activation Analysis Results in Determining the Oxygen and Carbon Content in Silicon;Journal of The Electrochemical Society;1972

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