Conduction properties of silicon dioxide in oxide-nitride-oxide structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
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4. Insulating Films on Semiconductors;Buchanan,1985
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Chapter 5 Multilayer dielectrics for memory applications;New Insulators, Devices and Radiation Effects;1999
2. Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices;Journal of Applied Physics;1998-02-15
3. An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's;IEEE Transactions on Electron Devices;1995-04
4. Silicon Nitride as Mask and Dielectric in Field Effect Devices;Si Silicon;1991
5. The physics of ONO layer dielectrics;Applied Surface Science;1989-10
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