Hall effect measurements on Sb and Ga implanted silicon; Anneal behavior and comparison with other species
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
4. Ion-implantation doping of semiconductors
5. ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
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1. A Historical View of the Role of Ion-Implantation Defects in PN Junction Formation for Devices;MRS Proceedings;2000
2. Post‐growth annealing of low temperature‐grown Sb‐doped Si molecular beam epitaxial films;Applied Physics Letters;1992-07-06
3. Electrical activity of aluminum implanted in silicon: An interface problem in high‐power devices;Journal of Applied Physics;1990-09
4. Optical properties of aluminum‐implanted and annealed silicon;Journal of Applied Physics;1990-02-15
5. Electronic properties of defects created by 1.6 GeV argon ions in silicon;Materials Science and Engineering: B;1989-02
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