Post‐growth annealing of low temperature‐grown Sb‐doped Si molecular beam epitaxial films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107618
Reference18 articles.
1. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
2. Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
3. Secondary implantation of Sb into Si molecular beam epitaxy layers
4. Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy
5. Properties of Si layers grown by molecular beam epitaxy at very low temperatures
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