A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
2. On the establishment of an inversion layer in p‐ and n‐type silicon substrates under conditions of high oxide fields
3. Effect of substrate generation current on oxide I-V measurement on p-type MOS structures
4. Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling
5. Tunneling of electrons from Si into thermally grown SiO2
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