Analysis of Mechanical Stress on Fowler-Nordheim Tunneling for Program Operation in 3D NAND Flash Memory
Author:
Funder
Pohang University of Science and Technology
Korea Ministry of Science and ICT
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
SK Hynix
Publisher
Elsevier BV
Reference17 articles.
1. Kim HS, Ahn SJ, Shin YG, Lee KP, Jung ES. Evolution of NAND Flash Memory: From 2D to 3D as a Storage Market Leader. Proceedings of the 2017 IEEE International Memory Workshop (IMW); 2017 May 14–17; Monterey, CA, USA. IEEE; 2017. https://doi.org/10.1109/IMW.2017.7939081.
2. Park SK. Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory. Proceedings of the 2015 IEEE International Memory Workshop (IMW); 2015 May 17–20; Monterey, CA, USA. IEEE; 2015. https://doi.org/10.1109/IMW.2015.7150307.
3. Parat K, Goda A. Scaling Trends in NAND Flash. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM); 2018 Dec 1–5; San Francisco, CA, USA. IEEE; 2018. https://doi.org/10.1109/IEDM.2018.8614694.
4. A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication;Kruv;Microelectron Eng,2022
5. Kruv A, Arreghini M, Gonzalez M, Verreck D, Van den bosch G, De Wolf I,et al. Impact of Mechanical Stress on the Electrical Performance of 3D NAND. Proceedings of the 2019 IEEE International Reliability Physics Symposium (IRPS); 2019 Mar 31–Apr 4; Monterey, CA, USA. IEEE; 2019. https://doi.org/10.1109/IRPS.2019.8720410.
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