Effect of substrate generation current on oxide I-V measurement on p-type MOS structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
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1. Electron and hole components of tunneling currents in metal–oxide–semiconductor diodes;Journal of Applied Physics;2001-11-15
2. A new method of studying on the dynamic parameters of bulk traps in thin SiO2 layer of MOS structures;Microelectronics Reliability;2000-06
3. Transient currents in pulsed metal–oxide–semiconductor tunnel diodes;Journal of Applied Physics;1998-07
4. Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structures;Solid-State Electronics;1995-05
5. Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures;Electronics Letters;1995
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