Author:
Xu M.,Tan C.,He Y.,Wang Y.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
2 articles.
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1. A new method of studying on the dynamic parameters of bulk traps in thin SiO2 layer of MOS structures;Microelectronics Reliability;2000-06
2. Tunnelling in thin SiO
2;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1996-10-15