Temperature dependence of threshold current for a quantum-well heterostructure laser-Reference-Cited by-同舟云学术

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Temperature dependence of threshold current for a quantum-well heterostructure laser

Published:1980-06 Issue:6 Volume:23 Page:585-589
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hess K.,Vojak B.A.,Holonyak N.,Chin R.,Dapkus P.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Quantum size effect–-present state and perspectives of experimental investigations

2. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

3. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region

4. Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)

5. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

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3. Laser diode on asymmetric heterostructure with two quantum wells and weak dependence of output power on temperature;SPIE Proceedings;2003-04-07

4. Practical formulations of the electron capture rate in quantum wells by phonon emission at low carrier density;Journal of Applied Physics;2002

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