Practical formulations of the electron capture rate in quantum wells by phonon emission at low carrier density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference31 articles.
1. Temperature dependence of threshold current for a quantum-well heterostructure laser
2. Resonant carrier capture by semiconductor quantum wells
3. Direct determination of carrier capture times in low‐dimensional semiconductor lasers: The role of quantum capture in high speed modulation
4. Unambiguous determination of quantum capture, carrier diffusion, and intrinsic effects in quantum-well laser dynamics using wavelength-selective optical modulation
5. J. Shah,Ultrafast Spectroscopy of Semiconductors and Semiconductors Nanostructures(Springer, Berlin, 1999), Chaps. 4 and 8, and references herein.
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1. Dielectric Function of a Quantum-Confined Thin Film with a Modified Pöschel–Teller Potential;Ukrainian Journal of Physics;2018-12-09
2. Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering;Journal of Applied Physics;2017-03-28
3. Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1−xN quantum wells;Chinese Physics B;2012-09
4. Dielectric function of quasi-2D semiconductor nanostructures;Semiconductors;2007-02
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