Analytical models for AlGaAs/GaAs heterojunction quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
2. Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions
3. Quantum mechanical determination of the potential and carrier distributions in the inversion layer of metal—oxide—semiconductor devices
4. Subbands and charge control in a two‐dimensional electron gas field‐effect transistor
5. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
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