Effect of signal modulated optical illumination on the Schrödinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics-Reference-Cited by-同舟云学术

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Effect of signal modulated optical illumination on the Schrödinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics

Published:2000 Issue:7 Volume:88 Page:4325
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Singh P. K.,Pal B. B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMT's under optical illumination

2. Optically controlled characteristics in an ion-implanted silicon MESFET

3. Frequency dependent characteristics in an ion-implanted photo MESFET

4. The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET

5. Optically-controlled switching characteristics of silicon MESFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-channel MODFET as an optoelectronic detector;Materials and Devices for Optical and Wireless Communications;2002-08-30

2. Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations;Applied Physics Letters;2001-03-12

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