Optically-controlled switching characteristics of silicon MESFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation
2. New modeling of GaAs MESFET's
3. GaAs FET RF switches
4. Optically controlled characteristics in an ion-implanted silicon MESFET
5. Physics of Semiconductor Devices;Sze,1981
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1. Model for dc and rf characteristics of optically biased GaN metal semiconductor field effect transistor for electronic/optoelectronic microwave applications;Optical Engineering;2002-11-01
2. Numerical Simulation for Estimating the Optically Controlled Characteristics of an Ion-Implanted Si-MESFET;IETE Journal of Research;2000-07
3. Effect of signal modulated optical illumination on the Schrödinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics;Journal of Applied Physics;2000
4. Effect of intensity-modulated optical radiation on the DC characteristics of GaAs MESFETs;Physica Status Solidi (a);1994-05-16
5. Effect of signal-modulated optical radiation on the characteristics of a Modfet;Applied Physics A Solids and Surfaces;1993-04
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