Frequency dependent characteristics in an ion-implanted photo MESFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Optically controlled characteristics in an ion-implanted silicon MESFET
2. GaAs m.e.s.f.e.t.: a high-speed optical detector
3. Measurement and simulation of GaAs FET's under electron-beam irradiation
4. A device model for an ion-implanted MESFET
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1. Optical response and sensitivity of an ion-implanted MESFET under electron velocity saturation;Optical Engineering;2019-11-14
2. A theoretical approach to study the optical sensitivity of a MESFET;AIP Conference Proceedings;2018
3. Optical response of a metal-semiconductor field effect transistor in the presence of interface states and interfacial layer at the gate contact;Journal of Applied Physics;2008-08-15
4. Effect of signal modulated optical illumination on the Schrödinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics;Journal of Applied Physics;2000
5. AC characteristics of optically controlled MESFET (OPFET);Journal of Lightwave Technology;1997-07
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