Resistivity profile measurements of proton-irradiated n-type silicon-Reference-Cited by-同舟云学术

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Resistivity profile measurements of proton-irradiated n-type silicon

Published:1994-01 Issue:1 Volume:37 Page:55-60
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Keskitalo Niclas,Hallén Anders

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. IEEE Int. Electron Device Meeting, Tech. Dig.;Siber,1985

2. Localized lifetime control in insulated-gate transistors by proton implantation

3. Production of Fast Switching Power Thyristors by Proton Irradiation

4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

5. Physics of Semiconductor Devices;Sze,1981

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode;IEEE Transactions on Electron Devices;2015-06

2. Effect of proton energy on damage generation in irradiated silicon;Journal of Applied Physics;2010-04-15

3. Doping compensation for increased robustness of fast recovery silicon diodes;Microelectronics Reliability;2010-01

4. Low-voltage cathodoluminescence properties of Y3Al5O12:Tb3+ nanopowders;Journal of Alloys and Compounds;2008-02

5. Chemical ordering in ilmenite-hematite bulk ceramics through proton irradiation;Applied Physics Letters;2004-12-13

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