Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode-Reference-Cited by-同舟云学术

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Published:2015-06 Issue:6 Volume:62 Page:1964-1969
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vobecky Jan^ORCID,Hazdra Pavel,Popelka Stanislav,Sharma Rupendra Kumar

Funder

Czech Science Foundation–Grantová Agentura České Republiky

European social fund within the Framework of Realizing through the Project entitled Support of Inter-Sectoral Mobility and Quality Enhancement of Research Teams at the Czech Technical University, Prague

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7109960/07094234.pdf?arnumber=7094234

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