New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors-Reference-Cited by-同舟云学术

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New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors

Published:1994-08 Issue:8 Volume:37 Page:1491-1501
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Voinigescu S.P.,Iniewski K.,Lisak R.,Salama C.A.T.,Noél J.-P.,Houghton D.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures

2. Semiconductor Material and Device Characterization;Schroeder,1990

3. Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures

4. Charge dynamics in heterostructure Schottky-gate capacitors and their influence on the transconductance and low-frequency capacitance of MODFETs

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