High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas-Reference-Cited by-同舟云学术

High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas

Published:2021 Issue:32 Volume:9 Page:17390-17399
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhao Tianshi¹²^ORCID,Liu Chenguang³,Zhao Chun¹,Xu Wangying⁴^ORCID,Liu Yina⁵,Mitrovic Ivona Z.²,Lim Eng Gee¹,Yang Li³^ORCID,Zhao Ce Zhou¹

Affiliation:

1. School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China

2. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK

3. Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China

4. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

5. Department of Mathematical Sciences, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China

Abstract

The optimization of solution-processed ZTO TFTs was successfully realized by fabricating a channel layer into a homojunction structure (MXene doped ZTO/ZTO) to form a 2DEG. The device shows excellent electrical performance with a maximum annealing temperature of ≤300 °C.

Funder

Natural Science Foundation of Jiangsu Province

UK-India Education and Research Initiative

Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D1TA01355F

Reference72 articles.

1. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors