Charge dynamics in heterostructure Schottky-gate capacitors and their influence on the transconductance and low-frequency capacitance of MODFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1568/00040917.pdf?arnumber=40917
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors;Applied Physics Letters;2018-06-04
2. Dual-gate multiple-quantum-well (MQW) heterojunction field-effect transistors (HFETs) for active phase shifters;Microwave and Optical Technology Letters;1996-08-20
3. Design of active phase shifters based on multichannel heterojunction field effect transistors (MCHFET's);IEEE Transactions on Electron Devices;1996
4. New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors;Solid-State Electronics;1994-08
5. Optimal channel grading in p-type Si/SiGe metal oxide semiconductor field effect transistors (MOSFETs);Canadian Journal of Physics;1992-10-01
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