Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures-Reference-Cited by-同舟云学术

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Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

Published:1995-08 Issue:8 Volume:38 Page:1465-1471
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Depas M,Vermeire B,Mertens P.W,Van Meirhaeghe R.L,Heyns M.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Tunneling of electrons from Si into thermally grown SiO2

2. Electron tunneling in Si‐SiO2‐Al structures: A comparison between 〈100〉 oriented and 〈111〉 oriented Si

3. On tunneling in metal‐oxide‐silicon structures

4. Tunneling in thin MOS structures

5. The Physics and Chemistry of SiO2 and the SiSiO2 Interface;Maserjian,1988

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